| 摘要 |
PROBLEM TO BE SOLVED: To reduce the thickness of a nitride film to be very thin so as to facilitate control of the thickness of an entire capacitor, by annealing a lower electrode in an atmosphere containing nitrogen atoms via a tantalum oxide film to form a nitride film, and forming an upper electrode on the tantalum oxide film. SOLUTION: A lower electrode 1 is formed by using a silicon substrate or a polysilicon film in which impurity of phosphorus is diffused at a high density. Then, a tantalum oxide film 2 is formed on the lower electrode 1 by a sputtering method or a CVD method, and the lower electrode 1 is annealed in an atmosphere containing nitrogen atoms via the tantalum oxide film 2. Thus, nitrogen atoms are diffused into the tantalum oxide film 2 and caused to react with the lower electrode 1, thereby forming a nitride film 3 on the interface between the lower electrode 1 and the tantalum oxide film 2. Then, an upper electrode 4 is formed on the tantalum oxide film 2. Thus, the nitride film may be made very thin, and the thickness of an entire capacitor may be easily controlled. |
