| 摘要 |
<p>PURPOSE: To provide a semiconductor photo-electric cathode device wherein the quantum efficiency is improved, and the aperture ratio is 100%, the separation of picture elements in the structure is not required, and the modulation of a signal is made possible. CONSTITUTION: A first semiconductor layer 20 (light absorbing layer) for generating electrons by responding to incidence of light, and provided with the p-type first impurity concentration is formed on a semiconductor base plate 10. A p-type second semiconductor layer 30 (electron transferring layer) of the second impurity concentration having the impurity concentration lower than the first impurity concentration is formed on the first semiconductor layer 20. A Schottky electrode 50 is in Schottky-contact with the p-type second semiconductor layer 30. A third semiconductor layer 40 (active layer) is formed on the front surface of the p-type second semiconductor layer 30 and also on the opening of the Schottky electrode 50. A semiconductor part 60 (channel lattice) of the third impurity concentration is embedded in the p-type second semiconductor layer 30. A lead pin RE5 is connected to the semiconductor part 60.</p> |
