METAL THIN FILM TYPE PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A metal thin film type pressure sensor and a method for manufacturing the same are provided to achieve a compact, light and inexpensive metal thin film type pressure sensor having improved reliability with little hysteresis. CONSTITUTION: A metal thin film type pressure sensor includes: a silicon substrate(10) having silicon membranes(11); strain gauges(12) attached on the silicon membranes(11) of the silicon substrate(10); a Wheatstone bridge formed on the silicon substrate(10); connecting conductors(14) for connecting the strain gauges(12) with the Wheatstone bridge; and electrodes(16) formed on the Wheatstone bridge. A method for manufacturing the metal thin film sensor consists of: a step of forming the silicon membranes(11) on the silicon substrate(10); a step of attaching strain gauges(12) on the silicon membranes(11); a step of connecting the strain gauges(12) with the Wheatstone bridge; and a step of forming the electrodes(16) on the connecting conductors(14).