发明名称 |
AN ARRANGEMENT FOR PREVENTING SHORT-CIRCUITING IN A BIPOLAR DOUBLE-POLY TRANSISTOR AND A METHOD OF FABRICATING SUCH AN ARRANGEMENT |
摘要 |
In a bipolar double-poly transistor comprising a layer of base silicon (1') on a silicon substrate (2'), a first layer of silicon dioxide (3') on the base silicon layer (1'), an emitter window (4') extending through the first layer (3') of silicon dioxide and the base silicon layer (1'), a second layer (5') of silicon dioxide in the emitter window (4'), silicon nitride spacers (6') on the second layer (5') of silicon dioxide in the emitter window (4'), and emitter silicon (9') in the emitter window (4'), an isolating silicon nitride seal is provided to separate the base silicon (1') from the emitter silicon (9') to prevent short-circuiting between the base silicon (1') and the emitter silicon (9') in the transistor. |
申请公布号 |
WO03063224(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
WO2002SE02212 |
申请日期 |
2002.12.02 |
申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON (PUBL);JOHANSSON, TED;NORSTROEM, HANS;LINDGREN, ANDERS |
发明人 |
JOHANSSON, TED;NORSTROEM, HANS;LINDGREN, ANDERS |
分类号 |
H01L21/314;H01L21/331;H01L29/06;H01L29/08;H01L29/10;H01L29/732 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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