| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of growing GaN-based compound semiconductor crystal, by which the cracking of a grown GaN-based compound semiconductor crystal can be prevented effectively in the growth step of the crystal. <P>SOLUTION: In this method, the GaN-based compound semiconductor crystal is grown on the surface of a substrate composed of a group XIII (IIIb) rare-earth perovskite crystal containing one, two, or more kinds of rare-earth elements. A thickness of the substrate is adjusted to be ≤250 μm so that the stress received by a GaN thick film crystal from the substrate due to the difference in the coefficients of thermal expansion between the substrate and crystal becomes smaller. <P>COPYRIGHT: (C)2003,JPO |
