| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mounting method for a flip type semiconductor device without causing the deterioration of characteristics thereof. <P>SOLUTION: When a conductive protruded electrode of a flip chip type semiconductor device is connected with an electrode on a flat plate substrate surface, that is achieved while applying heat or heat and ultrasonic waves, and is then heat treated. Particularly, in the case of the flip chip type semiconductor device comprising a compound semiconductor, it is heated in the range of 200 to 300°C to connect a conductive protruded electrode and an electrode on the flat plate substrate surface, and then a heat treatment is performed in a temperature range of 350 to 450°C, whereby shear strength is ensured without causing the deterioration of device characteristics. <P>COPYRIGHT: (C)2003,JPO</p> |
