发明名称 Semiconductor integrated circuit device
摘要 A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, and a metal layer such as a pad, wiring layer or inductor having a predetermined pattern, formed on an interlayer insulation film formed on the above shield/planarization portion. Just under the metal layer is disposed the shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded.
申请公布号 US2003141501(A1) 申请公布日期 2003.07.31
申请号 US20020193150 申请日期 2002.07.12
申请人 KOMURASAKI HIROSHI;YAMAMOTO KAZUYA;SATOH HISAYASU;WAKADA HIDEYUKI 发明人 KOMURASAKI HIROSHI;YAMAMOTO KAZUYA;SATOH HISAYASU;WAKADA HIDEYUKI
分类号 H01L27/04;H01L21/02;H01L21/82;H01L21/822;H01L23/522;H01L23/552;H01L27/08;(IPC1-7):H01L29/40 主分类号 H01L27/04
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