发明名称 |
Methods of forming field effect transistors including floating gate field effect transistors |
摘要 |
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
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申请公布号 |
US2003143814(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020061739 |
申请日期 |
2002.01.31 |
申请人 |
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发明人 |
BICKSLER ANDREW R.;SANDHU SUKESH |
分类号 |
H01L21/28;H01L21/336;H01L29/788;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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