| 摘要 |
Memory cell arrangement having a memory cell array which has at least one layer of magnetoresistive memory components ( 11 ) which are each connected to first contact-making lines ( 10 ), the first contact-making lines ( 10 ) lying within a first dielectric layer ( 6 ), and are each connected to second contact-making lines ( 20; 29; 35 ), the second contact-making lines ( 20; 29; 35 ) lying within a second dielectric layer ( 17; 27; 32 ). |
