| 摘要 |
PURPOSE: A burn-in test apparatus of a semiconductor device is provided to improve the reliability of the device by preventing a specific memory cell or a gate oxide from a heavy stress by giving a dat line stress to the dummy word line using as a memory mat dummy. CONSTITUTION: A burn-in test apparatus of a semiconductor device includes a plurality of main word lines(21), a plurality of main bit lines(22), a sense amplifier(23), a sub word line driver(24), a plurality of memory cells(25), a dummy word line(26), a dummy bit line(27) and a dummy cell(28). In the burn-in test apparatus, the plurality of main word lines(21) are formed by a predetermined distance in a specific direction, and the plurality of the main bit lines(22) are formed by a predetermined distance in a vertical direction with respect to the main word lines(21). The sense amplifier(23) amplifies the voltage to store and to read the data on/from the memory cell by connecting to each of the main bit lines(22). The sub word line driver(24) drives the word line and the plurality of the memory cells(25) are connected between each of the main word lines(21) and the main bit lines(22). The dummy word line(26) is formed on the most outer peripheral surface of the main word lines(21) in the same direction of the main word lines(21) and the dummy bit line(27) is formed on the most outer peripheral surface of the main bit lines(22) in the same direction of the main bit lines(22). And, the dummy cell(28) is connected between the dummy word line(26) and the dummy bit line(27).
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