| 发明名称 |
Method and apparatus for ionization film formation |
| 摘要 |
A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
|
| 申请公布号 |
US2003143868(A1) |
申请公布日期 |
2003.07.31 |
| 申请号 |
US20030350019 |
申请日期 |
2003.01.24 |
| 申请人 |
YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI |
发明人 |
YAMAGUCHI HIROHITO;KANAI MASAHIRO;KOIKE ATSUSHI;OYA KATSUNORI |
| 分类号 |
C23C14/04;C23C14/32;C23C14/35;G11B11/105;(IPC1-7):H01L21/31 |
主分类号 |
C23C14/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
