MEMORY DEVICE WITH COMPOSITE CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a memory device with a composite contact plug and a method of manufacturing the same.

SOLUTION: Before depositing a metal plug such as a Ru plug, a barrier layer is etched back until the surface of the barrier layer is below an upper edge of a contact hole. This insert-type barrier layer can prevent oxidation of a capacitor dielectric layer when the capacitor dielectric layer is deposited or in a high temperature process thereafter, resulting in preventing leakage and reliability problems which could be generated when the barrier layer and a memory electrode are brought into direct contact with each other. The contact hole is filled with the barrier layer to half the depth to lower an aspect ratio and facilitate fabrication of the metal plug. A diffusion barrier layer is formed between the bottom of the memory electrode and an insulation layer to prevent the diffusion of a metal contaminant which causes the reduction in quality of a transistor.

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