| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure transfer method which is capable of improving an exposure transfer system in throughput by restraining a resist film from outgassing. <P>SOLUTION: A desired resist film is formed on a wafer, then a coating agent film which is composed of a solvent and polymer dispersed into it and capable of reducing the partial pressure of gas originating from the resist film to 1/10 or below is formed on the top surface of the resist film, and the wafer that is subjected to baking if necessary is subjected to an exposure process for transferring a pattern. By this setup, the resist film is restrained from outgassing, and an optical system is less contaminated, so that an exposure transfer system can be kept operating for a long term as it is kept high in image forming performance. <P>COPYRIGHT: (C)2003,JPO |
