| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device so improved as to enable the realization of excellent wired circuits and the providing of highly integrated semiconductor circuits. SOLUTION: An impurity region 2 is formed on the surface of a semiconductor substrate 1, an insulating layer 3 covering the impurity region 2 is formed on the substrate 1, and a groove 5 is formed for a wiring layer in the surface of the insulating layer 3. A connection hole 4 is provided in the insulating layer 3 for connecting the groove 5 and the impurity region 2. In the connection hole 4, a conducting layer 6 is embedded, made of a high melting point metal or of its compound and, in the groove 5, a copper wire 8 is formed for connection to the conductor layer 6. COPYRIGHT: (C)2003,JPO |
