| 摘要 |
PROBLEM TO BE SOLVED: To obtain an epitaxial wafer having a GaN-based field effect transistor structure that is grown at a time on an SiC substrate, has little defects, and is high in gate-drain breakdown voltage. SOLUTION: The epitaxial wafer has the GaN-based field effect transistor structure in which a mixed nitride crystal layer including a GaN buffer layer 4 is formed as a channel layer and which is formed on the SiC substrate 6 through an AlN layer 5. At the time of manufacturing the wafer, the AlN layer 5 having a thickness of 5-25 nm is formed by two-dimensionally growing a core by adjusting the V/III ratio to 50-1,000 and the growing temperature to 1,050-1,400°C at the time of growing the layer 5. COPYRIGHT: (C)2003,JPO
|
