发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and a P-type well region is formed in the second epitaxial silicon layer. A P+-type buried layer is formed abutting on a bottom of the P-type well region, and an MOS transistor is formed in the P-type well region. The MOS transistor has a first source layer N+S of high impurity concentration, a first drain layer N+D of high impurity concentration and a second source layer N-S and/or a second drain layer N-D of low impurity concentration, which is diffused deeper than the first source layer N+S of high impurity concentration and the first drain layer N+D of high impurity concentration. |
申请公布号 |
US2003141530(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020329643 |
申请日期 |
2002.12.26 |
申请人 |
KANEKO SATORU;OHKODA TOSHIYUKI;MYONO TAKAO |
发明人 |
KANEKO SATORU;OHKODA TOSHIYUKI;MYONO TAKAO |
分类号 |
H01L27/04;H01L21/822;H01L21/8249;H01L27/02;H01L27/06;H01L27/08;H01L27/092;H02M3/07;(IPC1-7):H01L31/119;H01L29/76;H01L29/94;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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