| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high maximum breaking current and hard to be broken. <P>SOLUTION: In the semiconductor device, a semiconductor chip 10 is pressue- welded to a part between a flat surface of a first main electrode member 30 and an upper surface 21a of a pillar 22 of a second main electrode member 20 via buffer plates 40, 50, and a gate electrode of the chip 10 is electrically connected with a gate signal wiring pattern of a circuit wiring board by using a gate connection conductor. One of a contact region between the pillar 22 of the second main electrode member 20 and the buffer plate 40 and a contact region between a part of the first main electrode member 30 facing the pillar 22 and the buffer plate 40 is formed small compared with a contact region between the buffer plate 40 on the second main electrode member 20 side and the semiconductor chip 10. <P>COPYRIGHT: (C)2003,JPO |
