| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element whose heat radiation is improved. <P>SOLUTION: The semiconductor light emitting element 1 which has a semiconductor thin film layer stacked on a crystal substrate 2 made of sapphire, etc., is characterized in that the crystal substrate 2 is ≤50 μm thick; and heat generated at a light emission part is speedily conducted to a lead frame 8 through the sapphire substrate 2 to suppress the heat generation, so that luminance corresponding to an increased current quantity can be obtained. Thus the luminance is increased to improve the performance of a product. <P>COPYRIGHT: (C)2003,JPO |
