| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an activating annealing process by a device in simple structure. <P>SOLUTION: By using a III-nitride light emitting diode LED and a manufacture method thereof, a magnetic metal layer in a conversion III-nitride LED is formed by a method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to an eddy current effect, heat is generated by using an electromagnetic oven induced by an electromagnetic wave to activate a p-type semiconductor material in III-nitride LED. Equipment of a simple structure and low cost is advantageously provide. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated. <P>COPYRIGHT: (C)2003,JPO |
