| 摘要 |
PROBLEM TO BE SOLVED: To provide an L-DMOSFET in which high electrostatic breakdown strength can be attained without a sacrifice of the essential characteristics of the L-DMOSFET and without increasing the element area. SOLUTION: The double diffusion MOSFET has a drain region 13 of N type semiconductor layer formed on a semiconductor substrate 11, a body region 15 composed of a P type semiconductor region formed in the drain region 13, an N type source region 16 formed in the body region 15, and a gate electrode 21 formed on the surface of the body region 15, wherein an N+ type drain contact region 18 and a P+ type region 19 are formed to have the same potentials in the drain region 13. COPYRIGHT: (C)2003,JPO |
