| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which not only has a frequency temperature characteristic improved by forming an SiO<SB>2</SB>film on an IDT, but also has hardly a crack in the surface of the SiO<SB>2</SB>film, can securely obtain a desired characteristic, and has a large coefficient of electromechanical coupling and a small attenuation constantα. SOLUTION: The surface acoustic wave device has at least one IDT formed principally of Ag on an LiTaO<SB>3</SB>substrate of a 20-60°rotary Y plate and also has the SiO<SB>2</SB>film formed on the LiTaO<SB>3</SB>substrate while covering the IDT. COPYRIGHT: (C)2003,JPO
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