发明名称 |
Regulation method for the source terminal voltage in a non-volatile memory cell during a program phase and corresponding program circuit |
摘要 |
A method and a circuit are for regulating the source terminal voltage of a non-volatile memory cell during the cell programming and/or reading phases. The method includes a phase of locally regulating the voltage value and includes comparing the source current of the cell array with a reference current. A fraction of the source current is converted to a voltage and compared with a voltage generated from a memory cell acting as a reference and being programmed to the distribution with the highest current levels. The comparison may be used for controlling a current generator to inject, into the source terminal, the current necessary to keep the predetermined voltage thereof at a constant value.
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申请公布号 |
US2003142547(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020331106 |
申请日期 |
2002.12.27 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
MICHELONI RINO;MOTTA ILARIA |
分类号 |
G11C16/30;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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