| 摘要 |
Temperature of molten silicon 1 in an infrared image furnace 2 including a halogen lamp 8 as a heating source to grow a single crystal of silicon in a floating-zone method is measured with high precision according to light radiated from the molten silicon 1. By disposing an optical path tube extending to the molten silicon 1, light propagating from the molten silicon 1 in a particular direction can be extracted. As a result, light radiated from the molten silicon 1 can be extracted while reducing the influence of disturbance of light from various directions such as light radiated from the halogen lamp 8, reflected light and scattered light thereof, and the like. Luminance of light thus extracted is measured by a CCD camera 7 to obtain the temperature according to the luminance, and hence the temperature can be measured with high precision using a measuring apparatus of a simple configuration.
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