| 摘要 |
<p>A method for manufacturing a nitride semiconductor device comprises the steps of growing a low-temperature deposited layer of a group III-V nitride semiconductor containing at least Al on a substrate (101) at a first temperature, heat-treating the low-temperature deposited layer at a second temperature higher than the first temperature to change it to a facet structure layer (102), initially growing a GaN semiconductor layer (103) at a third temperature on the facet structure layer (102), and performing major growth of the GaN semiconductor layer (103) at a forth temperature lower than the third temperature. By this method, a nitride semiconductor device high in quality and reliability is provided.</p> |
