| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a low-dislocation III nitride film can be easily manufactured. <P>SOLUTION: On a substrate 1, composed of a first Al-containing nitride, a plurality of island-like crystal sections 2-1 to 2-4 consisting of a second nitride and isolated from each other, is formed. Then the nitride film 3 is manufactured from a third nitride by epitaxially growing the crystal sections 2-1 to 2-4 as seeds. <P>COPYRIGHT: (C)2003,JPO |
