发明名称 MAGNETORESISTIVE EFFECT FILM
摘要 PROBLEM TO BE SOLVED: To provide a soft magnetic film that can largely contribute to the realization of a magnetoresistive effect film capable of being reduced in electrical resistance as much as possible. SOLUTION: An NiFe layer 47a contains face centered cubic lattice crystals and body centered cubic lattice crystals. The soft magnetism of the layer 47a is established by the actions of the face centered cubic lattice crystals. On the other hand, the body centered cubic lattice crystals contribute to the reduction of the electrical resistance of the magnetoresistive effect film 41 and, at the same time, to the improvement of the magnetoresistive effect ratio of the film 41. When the electrical resistance value of the film 14 is reduced, the film 14 can sufficiently avoid the occurrence of temperature rises even when the film 41 is scale-downed. Consequently, the deterioration or destruction of the characteristics of the film 14 can be avoided to the utmost even when a sense current is supplied to the film 14 at a relatively large current value. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003218424(A) 申请公布日期 2003.07.31
申请号 JP20020009560 申请日期 2002.01.18
申请人 FUJITSU LTD 发明人 NOMA KENJI
分类号 G01R33/09;G11B5/39;H01F10/14;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):H01L43/08 主分类号 G01R33/09
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