HIGHLY INTEGRATED MAGNETIC MEMORY ELEMENT AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a highly integrated magnetic memory element. SOLUTION: The magnetic memory element is provided with a vertical transistor 120 arranged on a substrate 110, a magnetic memory element 150 having a data storage function using a magnetic body on the vertical transistor 120, a bit line 160 connected to the vertical transistor 120 through the magnetic memory element 150, a writing word line 180 crossing the bit line at the upper part of the bit line 160 and an insulating layer formed between the writing word line and a constitution element below the line. The magnetic memory element whose integration degree is improved compared to a conventional case by adopting the vertical transistor 120 is obtained. COPYRIGHT: (C)2003,JPO