Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process

摘要

A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 mum thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23° C. within ten seconds.