发明名称 |
ENHANCEMENT OF AN INTERCONNECT |
摘要 |
A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure. |
申请公布号 |
WO03063209(A2) |
申请公布日期 |
2003.07.31 |
申请号 |
WO2003US00525 |
申请日期 |
2003.01.07 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAMBERS, STEPHEN;DUBIN, VALERY;OTT, ANDREW;HUA-RIEGE, CHRISTINE |
分类号 |
H01L21/288;H01L21/768 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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