发明名称 |
A METHOD OF FABRICATION FOR III-V SEMICONDUCTOR SURFACE PASSIVATION |
摘要 |
A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material (1 of Figure 2) to be passivated an oxide layer (3 of Figure 2) is formed. Thereafter, the surface of the III-V semiconductor material having the oxide layer is passivated, without desorption of the oxide layer and in a vacuum of 2x10-6 Torr, with a material (5 and 7 of Figure 2) having the ability to intermix with the oxide layer so as to exchange oxygen, passivation layer material, and III-V semiconductor material therebetween to form graded layers of oxidized III-V and passivation material. |
申请公布号 |
WO03063227(A2) |
申请公布日期 |
2003.07.31 |
申请号 |
WO2003US00786 |
申请日期 |
2003.01.10 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
GOODHUE, WILLIAM, D., JR. |
分类号 |
H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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