| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that a photo-electric conversion device provided by a conventional manufacturing method is low in conversion efficiency. <P>SOLUTION: The photoelectric conversion device is manufactured as follows. A number of crystal silicon particles 3 of first conductive types are avenged on a substrate 1 as one electrode, an insulation material 2 is laid among the crystal silicon particles 3, and an semiconductor 4 of a second conductive type is formed on the crystal silicon particle 3. A protective layer 6 is formed on the surface of the crystal silicon particle 3 that contacts with the insulating material 2. <P>COPYRIGHT: (C)2003,JPO</p> |
