| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing an insulated gate semiconductor device in which the creation of a low permittivity oxide film is retarded at the interface of a semiconductor substrate. SOLUTION: An oxide having an oxygen ion conduction power is employed as a gate insulation film 2 and a positive potential gradient is provided from a semiconductor substrate 1 to the surface of the gate insulation film 2 at the time of depositing the gate insulation film 2. COPYRIGHT: (C)2003,JPO
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