| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a high dielectric gate insulation film containing a metal that the metal is diffused up to the surface of a poly-Si gate electrode at the time of annealing for activating impurities and becomes the source of contaminant of the other element. SOLUTION: In the semiconductor device comprising a functional element formed on a semiconductor substrate through an insulation film, the insulation film contains at least one kind of metal oxide, nitride and oxynitride, a gate electrode is formed through the insulation film, and a metal intake region is provided in the gate electrode. The metal intake region does not lower the total conductivity of the gate electrode significantly. COPYRIGHT: (C)2003,JPO
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