| 摘要 |
PROBLEM TO BE SOLVED: To prevent the threshold voltage Vth of a thin film transistor from shifting to a plus side. SOLUTION: Openings 65 and 66 are formed through a resist film 64 formed on an overcoat film 59 including a pixel electrode 33 and for like at positions corresponding to a scanning pad 38 and the pixel electrode 33, and then reactive ion etching is performed. Consequently, an overcoat film 49 and a gate insulation film 42 in the opening 65 are removed to expose the scanning pad 38. Plus charges are generated on the side of a semiconductor thin film 43 interfacing the gate insulation film 42 since the opening 65 exists, but the plus charges are canceled by minus charges generated on the side of the semiconductor thin film 43 interfacing the an ohmic contact layer 46 since the opening 66 exists. Since the plus charges generated on the side of the semiconductor thin film 43 interfacing the gate insulation film 42 are not trapped as they are, the threshold voltage Vth of a thin film transistor 34 can be prevented from shifting to the plus side. COPYRIGHT: (C)2003,JPO
|
