| 摘要 |
PROBLEM TO BE SOLVED: To form a coil having a large Q factor on a semiconductor integrated circuit. SOLUTION: In this circuit, a volume contraction material layer 3 is formed by piling up upon a structure (a coil pattern 2) formed on a surface of a semiconductor integrated circuit, and the coil structure is formed by shifting the structure (the coil pattern 2) to the direction apart from the surface of a semiconductor integrated circuit 1 by decreasing volume of the volume construction material layer 3 after blocking by a blocking material 4. COPYRIGHT: (C)2003,JPO
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