| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device having an electrode-opening process for obtaining a contact window stage difference portion, capable of implementing a wiring thin film without process complexity, high cost, or occurrence of wiring defects. SOLUTION: The electrode-opening process comprises a resisted patterning process (ST10), a heat treatment process (ST11), a first etching process (ST12), a second etching process (ST13), a third etching process (ST14), and a resisted pattern removing process (ST15). In the third etching process (ST14) the contact window opening portion enlarged in the second etching is etched, and then the etching is stopped at half of depth of the stage difference formed in the first etching process. The contact window stage difference portion with a terrace is formed by this process. COPYRIGHT: (C)2003,JPO
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