Method of forming low dielectric constant insulating layer and method of manufacturing semiconductor device

摘要

A method of forming a low dielectric constant insulating layer according to one aspect of the present invention includes: applying a material of low dielectric constant insulating layer containing a precursor of substances to constitute the low dielectric constant insulating layer or the substances above a substrate to be processed; and curing the material of low dielectric constant insulating layer by irradiating the material of low dielectric constant insulating layer with electron beams with the substrate to be processed being heated in a treatment chamber, the electron beams being incident on the material of low dielectric constant insulating layer from a direction different from a direction vertical to a surface of the material of low dielectric constant insulating layer above the substrate.