| 摘要 |
The invention relates to a hetero-bipolar transistor with an emitter which comprises a first semiconductor layer (9), produced from a first semiconductor material, and a second semiconductor layer (8), produced from a second semiconductor material. An energy gap value of the first semiconductor material is smaller than an energy gap value of the second semiconductor layer. Between the first semiconductor layer (9) and the second semiconductor layer (8) an intermediate semiconductor layer (10), produced from an intermediate semiconductor material, is disposed. An energy gap value of the intermediate semiconductor material is greater than the energy gap value of the first semiconductor material and smaller than the energy gap value of the second semiconductor material. A potential barrier is formed at the interface between two semiconductor materials that have different energy gap values and said barrier has to be penetrated by a stream of electrons by tunneling. The energy barriers formed at the interfaces of the intermediate semiconductor layer (10) are easier for the electrons to penetrate than one energy barrier formed at the interface between the first semiconductor layer (9) and the second semiconductor layer (8) without an interposed intermediate semiconductor layer. The invention thus reduces the resistance of the hetero-bipolar transistor/emitter arrangement. |
