发明名称 |
VERTICAL METAL OXIDE SEMICONDUCTOR FIELD-EFFECT DIODES |
摘要 |
The semiconductor diodes are diode configured vertical metal oxide semiconductor field effect devices formed using semiconductor pedestals (304) and having one diode terminal (324) as the common connection between the gates (318) and drains (312) of the vertical metal oxide semiconductor field effect devices, and one diode terminal (330) as the common connection with the sources (314) of the vertical metal oxide semiconductor field effect devices. Methods of manufacturing the vertical metal oxide seminconductor field effect devices are also disclosed. |
申请公布号 |
WO02095835(A3) |
申请公布日期 |
2003.07.31 |
申请号 |
WO2002US14848 |
申请日期 |
2002.05.08 |
申请人 |
VRAM TECHNOLOGIES, LLC;METZLER, RICHARD, A. |
发明人 |
METZLER, RICHARD, A. |
分类号 |
H01L29/866;H01L21/329;H01L21/336;H01L27/08;H01L29/78;H01L29/861 |
主分类号 |
H01L29/866 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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