Integrierte Halbleiteranordnung

摘要

A power IC which facilitates applying a high voltage to the gate electrode (16) of the power output semiconductor element (1) of the power IC to break down defects around the gate oxide film in a short time and screening the power ICs efficiently. A gate terminal (27) for testing is led out from the gate electrode (16) of the MOS type semiconductor element (1) for the power output of the power and the screening test is conducted by applying a high voltage to the gate terminal (27) for testing. The expected detrimental effect of the applied high voltage on the control circuit (2) is avoided by a level shift means (6), or a switching means (7) switched off only during the screening test and short-circuited after the test is completed.