| 摘要 |
<p>A process for removing photoresist from semiconductor wafers (20) is disclosed wherein at least one semiconductor wafer (20) having at least one layer of photoresist is positioned in a process tank (10); ozone gas (50) is provided to said process tank (10); and said semiconductor wafer (20) is spayed with a mixture of ozone (50) and deionized water (70) via at least one nozzle (80). The temperature during the process is maintained at or above ambient temperature. The ozone gas (50) supplied to the tank (10) is preferably under pressure within said process tank (10) and the nozzles (80) preferably spray the mixture of deionized water (70) and ozone (50) at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.</p> |
