| 摘要 |
PURPOSE: A batch-type plasma etching apparatus is provided to obtain the same etching condition regardless of the position of a wafer set in a chamber by rotating a cathode so that the wafer is exposed to a uniform etching condition. CONSTITUTION: The chamber(1) has a predetermined volume in which plasma is formed, functioning as an anode. The cathode(3) has multi faces in which a plurality of wafers(W) are simultaneously disposed, installed inside the chamber. A rotation unit(10) rotates the cathode, installed under the chamber to be connected to the cathode.
|
