CIRCUIT STRUCTURE AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a circuit structure and a semiconductor integrated circuit by which bad influence by transient phenomenon is reduced when switching operation of a transistor becomes high-speed to the degree which receives a bad influence by transient phenomenon which arises at a power supply grounding line. SOLUTION: In this circuit, a bypass capacitor having a specified capacity is provided with at a power supply grounding line neighboring on a driver circuit in the chip, so that influence by transient phenomenon at the time of switching is reduced. The capacity of the bypass capacitor is set larger than the parasitic capacity of the driver circuit, so that the characteristic impedance of the power supply grounding line is made not larger than the characteristic impedance of the internal wiring. COPYRIGHT: (C)2003,JPO