发明名称 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To evenly and efficiently reduce a metal oxide generated on a metal making an electrode and a wiring of a semiconductor device. SOLUTION: An object 2 to be processed on which a copper oxide is generated is placed in a processing chamber 3 to heat up to a specified temperature with a heater 8. Then, after carboxylic acid stored in a tank 15 is vaporized with a vaporizer 18, the vaporized carboxylic acid and a carrier gas are introduced into the processing chamber 3 through a processing gas supplying piping 16, to reduce the copper oxide of the object 2 to a metallic copper. Thereby a metal oxide is evenly reduced without roughenning a surface of the electrode and the wiring. Further, carbon dioxide and water generated at this time are both in a state of gas, so that impurities are prevented from remaining on a surface of the copper. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003218198(A) 申请公布日期 2003.07.31
申请号 JP20020009785 申请日期 2002.01.18
申请人 FUJITSU LTD 发明人 AKBAR ADE ASNEIL;OBA TAKAYUKI
分类号 H01L21/302;B08B7/00;H01L21/00;H01L21/02;H01L21/306;H01L21/3065;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/302
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