| 摘要 |
PROBLEM TO BE SOLVED: To improve the working limit range of a semiconductor device by making current concentrations to hardly occur at bipolar transistors existing at four corners of an active region at the time of turning on the device. SOLUTION: The electrode structure of the semiconductor device has: a peripheral region 2 surrounding the active region 1; a lower-layer base electrode 9 which is in contact with a base region 4 through base contact holes 8 of a first insulating film 7; a lower-layer emitter electrode 11 which is in contact with an emitter region 5 through the emitter contact hole 10 of the insulating film 7; an upper-layer base electrode 14 which is in contact with the base electrode 9 through the inter-base electrode hole 13 of a second insulating film 12 and insulated by the emitter electrode 11 and insulating film 12; and an upper-layer emitter electrode 16 which is in contact with the emitter electrode 11 through the inter-emitter electrode hole 15 of the insulating film 12 and insulated by the base electrode 9 and insulating film 12. The lower-layer base and emitter electrodes 9 and 11 have belt-like shapes. In addition, the electrode structure also has base contact holes 8 and inter-base electrode holes 13 adjoining the peripheral region 2 at the four corners of the active region 1. COPYRIGHT: (C)2003,JPO
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