| 摘要 |
EUV exposure apparatus for transferring a pattern on a reticle to a wafer, includes an illumination optical system having a plurality of illumination system mirrors for directing EUV light to the reticle, and a projection optical system having a plurality of projection system mirrors for directing reflection light from the reticle to the wafer. In the illumination optical system, a reflection-type optical integrator is arranged to form a plurality of light source images with the light from the light source. The optical integrator has a pinhole to branch a part of the EUV light to an EUV-light intensity detector. A controller controls the amount of exposure based on the intensity of EUV light detected by the EUV-light intensity detector. In this manner, precision in measuring the intensity of exposure light is improved, and compensation control of the amount of exposure is appropriately performed.
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