发明名称 |
Lithographic apparatus and device manufacturing method |
摘要 |
A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.
|
申请公布号 |
US2003142280(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020328174 |
申请日期 |
2002.12.26 |
申请人 |
ASML NETHERLANDS, B.V. |
发明人 |
BAKKER LEON;JONKERS JEROEN;VISSER HUGO MATTHIEU |
分类号 |
G03F7/20;H01L21/027;(IPC1-7):G03B27/42 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|