发明名称 Lithographic apparatus and device manufacturing method
摘要 A lithographic apparatus includes a first space containing a plasma source and also containing a source gas which may have a high absorption of radiation at the wavelength of the projection beam of the apparatus, this gas being restricted from entering the remainder of the lithographic system by a second space containing a buffer gas having a low absorption at the wavelength of the projection beam of the apparatus. The pressure of the buffer gas is lower than or equal to that of the source gas.
申请公布号 US2003142280(A1) 申请公布日期 2003.07.31
申请号 US20020328174 申请日期 2002.12.26
申请人 ASML NETHERLANDS, B.V. 发明人 BAKKER LEON;JONKERS JEROEN;VISSER HUGO MATTHIEU
分类号 G03F7/20;H01L21/027;(IPC1-7):G03B27/42 主分类号 G03F7/20
代理机构 代理人
主权项
地址