Resist pattern thickness reducing material, resist pattern and process for forming thereof, and semiconductor device and process for manufacturing thereof

摘要

A resist pattern thickness reducing material has at least one type selected from a water soluble resin and an alkali-soluble resin. A process for forming a resist pattern includes a step for coating the resist pattern thickness reducing material such that the surface of a first resist pattern formed is covered and forming a mixing layer of the resist pattern thickness reducing material and the material of the resist pattern, on the surface of the resist pattern. A process for manufacturing a semiconductor device includes a step for forming a resist pattern on an underlayer; a step for coating the resist pattern with a resist pattern thickness reducing material such that the surface of the resist pattern is covered and forming a mixing layer of a material of the resist pattern and the resist pattern thickness reducing material; a step for developing the resist pattern thickness reducing material to reduce thickness of the resist pattern so as to form a resist pattern reduced in thickness; a step for patterning the underlayer by etching by using the resist pattern as a mask.