| 摘要 |
PROBLEM TO BE SOLVED: To provide a heating element CVD apparatus and a heating element CVD method, which are capable of forming a high-quality polycrystalline silicon film (polysilicon film) on a device, when fabricating a silicon film using the heating element CVD apparatus. SOLUTION: The heating element CVD apparatus and the CVD method using the apparatus, in which the inner surface of a structure surrounding the space in between a substrate holder and a heating element is heated and maintained at at least 200°C or higher, preferably at 350°C or higher, during deposition of the silicon film on the substrate. COPYRIGHT: (C)2003,JPO
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