Semiconductor memory device capable of performing high-frequency wafer test operation

摘要

A semiconductor memory device generates a test clock signal (whose periods and cycle number are variable) having a shorter cycle than that of an external clock signal, and internally test data using the test clock signal. The semiconductor memory device may repeatedly perform read/write operations using the internally generated test clock signal during a half cycle of the external clock signal. By comparing output data in the read operation with known data, a test apparatus may determine whether memory cells of a memory device are normal. In a low-frequency test apparatus, it is possible to screen disadvantages that may occur when a high-speed memory device operates at a high frequency.